Numerical modeling of nonplanar oxidation coupled with stress effects
- 1 June 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
- Vol. 8 (6) , 599-607
- https://doi.org/10.1109/43.31516
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
- Numerical simulation of stress-dependent oxide growth at convex and concave corners of trench structuresIEEE Electron Device Letters, 1989
- SMART-P: rigorous three-dimensional process simulator on a supercomputerIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1988
- Oxidation-induced stress in a LOCOS structureIEEE Electron Device Letters, 1986
- A boundary integral equation approach to oxidation modelingIEEE Transactions on Electron Devices, 1985
- Finite-Element Simulation of Local Oxidation of SiliconIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1985
- A comprehensive two-dimensional VLSI process simulation program, BICEPSIEEE Transactions on Electron Devices, 1983
- The Oxidation of Shaped Silicon SurfacesJournal of the Electrochemical Society, 1982
- Viscous flow of thermal SiO2Applied Physics Letters, 1977
- General Relationship for the Thermal Oxidation of SiliconJournal of Applied Physics, 1965
- The Determination of the Optimum Accelerating Factor for Successive Over-relaxationThe Computer Journal, 1961