Model of the bias-enhanced nucleation of diamond on silicon based on atomic force microscopy and x-ray-absorption studies

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Abstract
The bias-enhanced nucleation of diamond on Si during microwave plasma assisted chemical vapor deposition has been studied by surface sensitive techniques like x-ray-absorption near-edge spectroscopy and atomic force microscopy. It has been observed that the nuclei growth starts on top of a graphitic layer, which contains basal planes oriented perpendicular to the surface. The preferential orientation is likely due to the stress produced by ion bombardment during the deposition. The surface termination of the oriented planes can be associated with active sites in the diamond nucleation process. Formation of SiC at the surface does not seem related to diamond nucleation. The nuclei grow mainly at the expense of carbonaceous adsorbates diffusing on the surface, in a process competitive with the formation of oriented graphitic material and new diamond nuclei.