Nucleation and interface formation mechanisms in atomic layer deposition of gate oxides
- 30 June 2003
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 82 (26) , 4758-4760
- https://doi.org/10.1063/1.1585129
Abstract
We present an in situ infrared spectroscopic study of the interface formation during atomic layer deposition of alternative high-permittivity (high-κ) gate dielectrics. Layer-by-layer oxide growth may be achieved by alternating pulses of a molecular metal precursor (e.g., trimethylaluminum for aluminum oxide growth) and water vapor. Contrary to common belief, we find that the metal precursor, not the oxidizing agent, is the key factor to control Al 2 O 3 nucleation on hydrogen-terminated silicon. Metal surface species catalyze subsurface Si oxidation. These findings have direct implications on growth conditions to optimize semiconductor-dielectric interfaces.Keywords
This publication has 24 references indexed in Scilit:
- Metalorganic chemical vapor deposition of aluminum oxide on Si: Evidence of interface SiO2 formationApplied Physics Letters, 2002
- Interface and material characterization of thin Al2O3 layers deposited by ALD using TMA/H2OJournal of Non-Crystalline Solids, 2002
- Materials Characterization of Alternative Gate DielectricsMRS Bulletin, 2002
- Characteristics of n+ polycrystalline-Si/Al2O3/Si metal–oxide– semiconductor structures prepared by atomic layer chemical vapor deposition using Al(CH3)3 and H2O vaporJournal of Applied Physics, 2001
- High-κ gate dielectrics: Current status and materials properties considerationsJournal of Applied Physics, 2001
- Alternative dielectrics to silicon dioxide for memory and logic devicesNature, 2000
- High-resolution depth profiling in ultrathin Al2O3 films on SiApplied Physics Letters, 2000
- The electronic structure at the atomic scale of ultrathin gate oxidesNature, 1999
- Al3O3 thin film growth on Si(100) using binary reaction sequence chemistryThin Solid Films, 1997
- Sequential surface chemical reaction limited growth of high quality Al2O3 dielectricsApplied Physics Letters, 1989