High-resolution depth profiling in ultrathin Al2O3 films on Si
Top Cited Papers
- 10 January 2000
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 76 (2) , 176-178
- https://doi.org/10.1063/1.125694
Abstract
A combination of two complementary depth profiling techniques with sub-nm depth resolution, nuclear resonance profiling and medium energy ion scattering, and cross-sectional high-resolution transmission electron microscopy were used to study compositional and microstructural aspects of ultrathin (sub-10 nm) films on silicon. All three techniques demonstrate uniform continuous films of stoichiometric with abrupt interfaces. These film properties lead to the ability of making metal-oxide semiconductor devices with gate dielectric with equivalent electrical thickness in the sub-2 nm range.
Keywords
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