Characterization and production metrology of thin transistor gate oxide films

This publication has 71 references indexed in Scilit:

• Direct observation of Si lattice strain and its distribution in the Si(001)–SiO2 interface transition layer
  Applied Physics Letters, 1997
• Influence of Interface Roughness on Silicon Oxide Thickness Measured by Ellipsometry
  Journal of the Electrochemical Society, 1997
• Evidence of annealing effects on a high-density Si/SiO2 interfacial layer
  Applied Physics Letters, 1997
• Structure and electronic states of ultrathin SiO2 thermally grown on Si(100) and Si(111) surfaces
  Applied Surface Science, 1997
• Comparison of Si surface roughness measured by atomic force microscopy and ellipsometry
  Applied Physics Letters, 1996
• High-Density Layer at the SiO₂/Si Interface Observed by Difference X-Ray Reflectivity
  Japanese Journal of Applied Physics, 1996
• Chemical Structures of the SiO₂Si Interface
  Critical Reviews in Solid State and Materials Sciences, 1995
• Spectroscopic ellipsometry determination of the properties of the thin underlying strained Si layer and the roughness at SiO2/Si interface
  Applied Physics Letters, 1994
• Optical absorption in ultrathin silicon oxide films near theSiO2/Si interface
  Physical Review B, 1992
• Effects of thermal history on stress-related properties of very thin films of thermally grown silicon dioxide
  Journal of Vacuum Science & Technology B, 1989