Room-temperature annealing of radiation-induced defects in InP solar cells
- 1 December 1984
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (11) , 1206-1208
- https://doi.org/10.1063/1.95099
Abstract
Observation of effective room‐temperature annealing of radiation‐induced defects in InP is reported. By maintaining InP solar cells at room temperature (277–295 K), defect annealing in both p‐type and n‐type InP after electron irradiation is found, which results in the recovery of InP solar cell properties. The recovery on InP solar cell properties is found to be due to room‐temperature annealing of radiation‐induced minority‐carrier deep trap in the substrate layer. These results suggest that InP solar cells have better radiation hardness characteristics than Si or GaAs solar cells.Keywords
This publication has 2 references indexed in Scilit:
- Radiation damage in InP single crystals and solar cellsJournal of Applied Physics, 1984
- High conversion efficiency and high radiation resistance InP homojunction solar cellsApplied Physics Letters, 1984