Negative differential resistance of AlGaAs/GaAs heterojunction bipolar transistors: influence of emitter edge current

1 January 1995

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 16 (1) , 8-10
https://doi.org/10.1109/55.363216

Abstract

We report an electrical characterisation of AlGaAs/GaAs heterojunction bipolar transistors over a temperature range of 250 to 400 K in which the emitter edge current contribution to the negative differential output resistance (NDR) effect is determined. A quantitative analysis of the DC gain versus temperature and perimeter to area ratio indicates that emitter edge current has a major influence on the NDR magnitude.

Keywords

This publication has 9 references indexed in Scilit:

New nonthermal mechanism for negative differential resistance in heterojunction bipolar transistors
Applied Physics Letters, 1993
Negative output differential resistance in AlGaAs/GaAs heterojunction bipolar transistors
Applied Physics Letters, 1992
Determination of junction temperature in AlGaAs/GaAs heterojunction bipolar transistors by electrical measurement
IEEE Transactions on Electron Devices, 1992
Numerical studies of thermal effects on heterojunction bipolar transistor current-voltage characteristics using one-dimensional simulation
Solid-State Electronics, 1992
Transport and related properties of (Ga, Al)As/GaAs double heterostructure bipolar junction transistors
IEEE Transactions on Electron Devices, 1987
Super-gain AlGaAs/GaAs heterojunction bipolar transistors using an emitter edge-thinning design
Applied Physics Letters, 1985
A p n p AlGaAs/GaAs heterojunction bipolar transistor
Applied Physics Letters, 1985
High-frequency characteristics of AlGaAs/GaAs heterojunction bipolar transistors
IEEE Electron Device Letters, 1984
Semiconducting and other major properties of gallium arsenide
Journal of Applied Physics, 1982