Hydrogen-induced dereconstruction of Si(111)2×1 from first-principles molecular dynamics
- 27 April 1992
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 68 (17) , 2640-2643
- https://doi.org/10.1103/physrevlett.68.2640
Abstract
We have studied the dereconstruction of Si(111)2×1 upon hydrogen adsorption by means of first-principles total energy and molecular-dynamics calculations. We find that the (1×1) bulk-terminated surface structure becomes energetically favored over the (2×1), starting from a coverage θ∼0.3. This is consistent with LEED results showing that the dereconstruction is completed at θ∼0.5. A path for this conversion has been determined via direct simulation at θ=0.5. This has a rather low energy barrier, ∼0.10–0.15 eV/(surface atom), and should therefore occur with significant probability during hydrogenation of the surface.Keywords
This publication has 20 references indexed in Scilit:
- Two-phonon bound state for the hydrogen vibration on the H/Si(111) surfacePhysical Review Letters, 1991
- The importance of structure and bonding in semiconductor surface chemistry: hydrogen on the Si(111)-7 × 7 surfaceSurface Science, 1991
- Coupling of an adsorbate vibration to a substrate surface phonon: H on Si(111)Physical Review Letters, 1990
- Lifetime of an adsorbate-substrate vibration: H on Si(111)Physical Review Letters, 1990
- Hydrogenation of semiconductor surfaces: Si and Ge (111)Physical Review B, 1988
- Adsorption of atomic hydrogen on clean cleaved silicon (111)Surface Science, 1983
- New-Bonded Chain Model for Si(111)-(2×1) SurfacePhysical Review Letters, 1981
- Hydrogen chemisorption on Si(111)Physical Review B, 1977
- Self-Consistent Quantum Theory of Chemisorption: H on Si(111)Physical Review Letters, 1975
- Hydrogen adsorption and surface structures of siliconSurface Science, 1974