A step-free InAs quantum well selectively grown on a GaAs (111)B substrate

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Abstract
By combining finite-area selective growth and surface stoichiometry control, a step-free InAs quantum well was successfully obtained. An InAs/GaAs quantum-well structure was selectively grown by metalorganic vapor phase epitaxy on a GaAs (111)B substrate masked by a SiO2 pattern. A 100 nm thick and 8 μm diameter step-free GaAs buffer layer was grown at 800 °C and a step-free monolayer of InAs was grown on this surface at 650 °C. To eliminate indium segregation during the capping procedure, the InAs layer was buried by GaAs under a stable As-rich condition. The formation of a step-free InAs monolayer quantum well was confirmed by ex situ atomic force microscopy, and this observation was also supported by spatially resolved photoluminescence measurement.

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