Bound vacancy interstitial pairs in irradiated silicon
- 1 May 1997
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 127-128, 27-31
- https://doi.org/10.1016/s0168-583x(96)00851-8
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Point defects and their reactions in-irradiated GaAs investigated by x-ray-diffraction methodsPhysical Review B, 1996
- Frenkel pairs in low-temperature electron-irradiated InP: X-ray diffractionPhysical Review B, 1995
- Point defects and dopant diffusion in siliconReviews of Modern Physics, 1989
- Anomalous x-ray transmission in dislocation-free silicon after electron irradiationPhysical Review B, 1981
- The theory of diffuse X-ray scattering and its application to the study of point defects and their clustersJournal of Physics F: Metal Physics, 1973