Characterization of polished (111) silicon crystal surface by diffuse x-ray scattering
- 1 June 1981
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 52 (6) , 3989-3991
- https://doi.org/10.1063/1.329206
Abstract
The diffuse x-ray scattering due to small defects in a silicon single crystal, which has been found by Yasuami, Harada, and Wakamatsu [J. Appl. Phys. 50, 6860 (1979)] has been identified as coming from a thin surface layer of the crystal. The small defects, therefore, cannot be B-swirl defects and do not have any correlation with crystal growth methods, floating zone or Czochralski zone, and with growth direction. They are considered to be introduced during the surface polishing process and to exist in the surface layer of about 150 μm thick. For detecting such small defects, diffuse x-ray scattering is more advantageous than the conventional rocking curve measurement.This publication has 4 references indexed in Scilit:
- Observation of small defects in silicon crystal by diffuse x-ray scatteringJournal of Applied Physics, 1979
- Diffuse x-ray scattering from small defects in a very perfect silicon single crystalApplied Physics Letters, 1978
- Formation and nature of swirl defects in siliconApplied Physics A, 1975
- Characterization of swirl defects in floating-zone silicon crystalsJournal of Crystal Growth, 1975