A high efficiency V-band monolithic HEMT power amplifier

1 September 1994

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave and Guided Wave Letters

Vol. 4 (9) , 303-304
https://doi.org/10.1109/75.311515

Abstract

We report the performance of a monolithic V-band power amplifier using 0.15-μm double heterostructure pseudomorphic InGaAs/AlGaAs/GaAs HEMT's. The amplifier using a 400-μm device driving a 2×400-μm device. It has demonstrated output power of 313 mW (0.39 W/mm) with 8.95 dB power gain and 19.9% PAE at 59.5 GHz. These data represent the highest reported combination of output power, power gain, and power-added efficiency reported for a V-band monolithic power amplifier.

Keywords

This publication has 2 references indexed in Scilit:

Millimeter-wave high power amplifiers using pseudomorphic HEMTs
Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
Highpower 0.15-mm V-band pseudomorphic InGaAs-AlGaAs-GaAs HEMT
IEEE Microwave and Guided Wave Letters, 1993