Highpower 0.15-mm V-band pseudomorphic InGaAs-AlGaAs-GaAs HEMT
- 1 October 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave and Guided Wave Letters
- Vol. 3 (10) , 363-365
- https://doi.org/10.1109/75.242262
Abstract
The DC and RF power performance of double heterostructure pseudomorphic InGaAs-AlGaAs-GaAs HEMTs at V-band is reported. A 0.15-mm*400-mm device has demonstrated output power of 225 mW (0.55 W/mm) with 4.5-dB power gain and 25.4% power-added efficiency (PAE) at 60 GHz. A 0.15-mm*320-mm device demonstrated 31.1% PAE with 170-mW (0.53 W/mm) output power and 5.3-dB power gain. These data represent the highest reported combination of output power, power gain and power-added efficiency for a single device at V-band.<>Keywords
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