High-power V-band AlInAs/GaInAs on InP HEMTs
- 1 April 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 14 (4) , 188-189
- https://doi.org/10.1109/55.215155
Abstract
The DC and RF performance of delta -doped channel AlInAs/GaInAs on InP power high-electron-mobility transistors (HEMTs) are reported. A 450- mu m-wide device with a gate-length of 0.22 mu m has achieved an output power of 150 mW (at the 1-dB gain compression point) with power-added efficiency of 20% at 57 GHz. The device has a saturated output power of 200 mW with power-added efficiency of 17%. This is the highest output power measured from a single InP-based HEMT at this frequency, and demonstrates the feasibility of these HEMTs for high-power applications in addition to low-noise applications at V-band.Keywords
This publication has 6 references indexed in Scilit:
- High performance V-band low noise amplifiersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Heterojunction bipolar transistors for high efficiency power amplifiersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- V-band high-efficiency high-power AlInAs/GaInAs/InP HEMT'sIEEE Transactions on Microwave Theory and Techniques, 1993
- High-power V-band pseudomorphic InGaAs HEMTIEEE Electron Device Letters, 1991
- Very high power-added efficiency and low-noise 0.15- mu m gate-length pseudomorphic HEMTsIEEE Electron Device Letters, 1989
- Millimeter-wave power operation of an AlGaAs/InGaAs/GaAs quantum well MISFETIEEE Transactions on Electron Devices, 1989