An improved hot-electron-emission model for simulating the gate-current characteristic of MOSFETs
- 1 February 1988
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 31 (2) , 229-231
- https://doi.org/10.1016/0038-1101(88)90132-3
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Evaluation of hot carrier degradation of N-channel MOSFET's with the charge pumping techniqueIEEE Electron Device Letters, 1986
- Hot-electron and hole-emission effects in short n-channel MOSFET'sIEEE Transactions on Electron Devices, 1985