Combined effect of aluminium diffusion and annealing on GB properties in cast polysilicon
- 31 August 1993
- journal article
- Published by Elsevier in Solar Energy Materials and Solar Cells
- Vol. 30 (3) , 193-199
- https://doi.org/10.1016/0927-0248(93)90139-t
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Capacitance-voltage characteristics of grain boundaries in cast polycrystalline siliconJournal of Applied Physics, 1991
- Combined impurity gettering and defect passivation in polycrystalline silicon solar cellsApplied Physics Letters, 1990
- 17.8-percent efficiency polycrystalline silicon solar cellsIEEE Transactions on Electron Devices, 1990
- Precipitation at grain boundaries in siliconMaterials Science and Engineering: B, 1989
- Systematic study of the process parameters affecting hydrogen plasma passivation of polycrystalline silicon and polycrystalline silicon solar cellsSolar Energy Materials, 1988
- On the origin of the electrical activity in silicon grain boundariesRevue de Physique Appliquée, 1987
- Potential improvement of polysilicon solar cells by grain boundary and intragrain diffusion of aluminumJournal of Applied Physics, 1984
- Impurity gettering of polycrystalline solar cells fabricated from refined metallurgical-grade siliconIEEE Transactions on Electron Devices, 1980
- Theory of the electrical and photovoltaic properties of polycrystalline siliconJournal of Applied Physics, 1980
- Effect of grain boundaries in silicon on minority-carrier diffusion length and solar-cell efficiencyApplied Physics Letters, 1978