Theory of a forward-biased diffused-junction P-L-N rectifier—Part III: Further analytical approximations

Abstract
The approximate theory of the diffused-junction p-L-n rectifier, as developed in Part II of this series [2], is extended to include the realistic situation where the number of recombination centers in the diffused region can be much greater than that in the base region. The proposed extension employs the same analytical model for the diffused junction as in Part II, but uses a different approach in its treatment of the effective base region. By comparison with exact numerical solutions, the validity of the theory is established for a representative high-power silicon single-diffused n+-p-p+structure operating under high-level conditions. Some possible applications of the theory are considered.