Hydrogen-related defects in crystalline semiconductors: a theorist's perspective
- 1 June 1995
- journal article
- review article
- Published by Elsevier in Materials Science and Engineering: R: Reports
- Vol. 14 (7-8) , 319-412
- https://doi.org/10.1016/0927-796x(95)00178-6
Abstract
No abstract availableKeywords
This publication has 362 references indexed in Scilit:
- Longitudinal relaxation of muonium in Ge and GaAsHyperfine Interactions, 1994
- Simultaneous calculation of the equilibrium atomic structure and its electronic ground state using density-functional theoryComputer Physics Communications, 1994
- Gas source molecular beam epitaxy of ZnSe and ZnSe:NJournal of Electronic Materials, 1994
- First principles study of vacancies in SiComputational Materials Science, 1993
- New traps for H0 in p-type SiSuperlattices and Microstructures, 1991
- Chemical kinetics of hydrogen and (111) Si-SiO2 interface defectsApplied Physics Letters, 1990
- Chemical aspects of muon spin rotationHyperfine Interactions, 1984
- A site determination for Mu* and its implicationsHyperfine Interactions, 1984
- Muonium, hydrogen, and such in Si and GeHyperfine Interactions, 1979
- Roothaan-Hartree-Fock atomic wavefunctionsAtomic Data and Nuclear Data Tables, 1974