Effect of Carbon Concentration on Thermal Conversion in Semi-Insulating GaAs
- 1 March 1986
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 25 (3A) , L179
- https://doi.org/10.1143/jjap.25.l179
Abstract
A systematic analysis of heat treatment experiments on a large number of melt-grown GaAs crystals with different concentrations of carbon revealed that the carbon concentration strongly affects thermal conversion. That is, the crystal with a higher concentration, larger than 1.5×1016 cm-3, showed a greater tendency to convert during the 20 min anneal at 850°C with a Si3N4 cap than the crystal with a concentration of carbon less than 1.5×1016 cm-3. This is further evidence of outdiffusion of the main electron trap, EL2, during the anneal.Keywords
This publication has 6 references indexed in Scilit:
- Quantitative analysis of carbon in liquid-encapsulated Czochralski GaAsJournal of Applied Physics, 1985
- Effects of stoichiometry on thermal stability of undoped, semi-insulating GaAsJournal of Applied Physics, 1982
- Outdiffusion of the main electron trap in bulk GaAs due to thermal treatmentApplied Physics Letters, 1982
- Optical assessment of the main electron trap in bulk semi-insulating GaAsApplied Physics Letters, 1981
- Thermal conversion of GaAsJournal of Applied Physics, 1980
- Compensation mechanisms in GaAsJournal of Applied Physics, 1980