Energy-gap and electron-affinity contractions and their importance in bipolar device simulators

This publication has 7 references indexed in Scilit:

• The effect of high injection on the density of states of silicon
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2003
• A Model for Band‐Gap Shrinkage in Semiconductors with Application to Silicon
  Physica Status Solidi (b), 1985
• Evidence for excess carrier storage in electron-hole plasma in silicon transistors
  IEEE Electron Device Letters, 1985
• Transport equations for the analysis of heavily doped semiconductor devices
  Solid-State Electronics, 1981
• Rigid band analysis of heavily doped semiconductor devices
  IEEE Transactions on Electron Devices, 1981
• Equivalent circuit models in semiconductor transport for thermal, optical, auger-impact, and tunnelling recombination–generation–trapping processes
  Physica Status Solidi (a), 1971
• The Theory ofp-nJunctions in Semiconductors andp-nJunction Transistors
  Bell System Technical Journal, 1949