Dosimetric Silica Films: The Influence of Fields on the Capture of Positive Charge
- 1 January 1982
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 29 (6) , 1975-1979
- https://doi.org/10.1109/tns.1982.4336481
Abstract
The influence of oxide field and dose magnitude on the buildup of positive charge in dosimetric silica films has been studied in experiments using x-and gamma rays in the 0.1 to 100 Krad region. Specially-prepared metal-oxide-semiconductor (MOS) transistors and capacitors on n-type silicon were used. By the use of a normalisation method, the results have been compared with many earlier studies on MOS capacitors and commercial MOS transstors. At low fields, response rises sharply with field. At higher fields, a plateau region may or may not be followed by a region of negative slope. The relative importance of interface and bulk charge is discussed.Keywords
This publication has 16 references indexed in Scilit:
- An Electrical Technique to Measure the Radiation Susceptibility of MOS Gate InsulatorsIEEE Transactions on Nuclear Science, 1979
- The Development of an MOS Dosimetry Unit for Use in SpaceIEEE Transactions on Nuclear Science, 1978
- High-field capture of electrons by Coulomb-attractive centers in silicon dioxideJournal of Applied Physics, 1976
- Capture and emission of electrons at 2.4-eV-deep trap level in SifilmsPhysical Review B, 1975
- Gamma and vacuum ultraviolet irradiations of ion implanted SiO2 for MOS dielectricsIEEE Transactions on Nuclear Science, 1974
- Rapid annealing and charge injection in Al2O3 MIS capacitorsIEEE Transactions on Nuclear Science, 1974
- Hole and electron transport in SiO2 filmsJournal of Applied Physics, 1974
- Determining the Energy Distribution of Pulse-Radiation-Induced Charge in MOS Structures from Rapid Annealing MeasurementsIEEE Transactions on Nuclear Science, 1972
- A Survey of Radiation-Induced Perturbations in Metal-Insulator-Semiconductor Structures8th Reliability Physics Symposium, 1971
- Electric Field Effects in Trapping ProcessesJournal of Applied Physics, 1966