Fine Structure of a Deep Photolumineseence Band Related to Oxygen in LEC-GaAs
- 1 November 1986
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 25 (11A) , L878
- https://doi.org/10.1143/jjap.25.l878
Abstract
A fine structure is discovered in a 0.63 eV photoluminescence emission band in GaAs at 4.2 K under the excitation of the 5145 A line of an Ar-laser. The fine structure is interpreted to be due to the phonon side-bands of the oxygen-related radiative transition. The emission band is stronger in both Ga2O3 doped LEC–GaAs and undoped LEC–GaAs grown using wet B2O3, as an encapsulant than in conventional undoped GaAs grown by dry B2O3 encapsulant. Nonlinear least squares fitting of the band gives 6.7 for Huang-Rhys coupling constant, 0.0237 eV for the coupled phonon energy and 0.16 eV for the Franck-Condon shift. Thermal energy of oxygen related level is evaluated as 0.74±0.02 eV below theconduction band.Keywords
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