Spatial dependence of the carrier lifetime in thin films of silicon on sapphire
- 15 July 1974
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 25 (2) , 103-105
- https://doi.org/10.1063/1.1655396
Abstract
An experimental technique is described for determination of the generation carrier lifetime as a function of the distance of the insulator‐semiconductor interface. This method is applied to thin films of silicon on sapphire nominally 1 μ thick and doped n type.Keywords
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