The fabrication of sub-micron width mesas in GaAs/Ga1-xAlxAs heterojunction material
- 1 October 1988
- journal article
- letter
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 3 (10) , 1057-1059
- https://doi.org/10.1088/0268-1242/3/10/017
Abstract
A method for the fabrication of sub-micron width mesas of GaAs/Ga1-xAlxAs heterojunction material is presented. The technique employs optical lithography and wet etching and is considered to cause minimal damage to the material. The exceptionally smooth etch surfaces obtained make the structures highly suitable for the study of quasi-one-dimensional transport phenomena.Keywords
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