Superconducting Properties and Phase Analysis of Nb-Si Thin Films Produced by Sputtering
- 1 September 1986
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 25 (9R)
- https://doi.org/10.1143/jjap.25.1336
Abstract
Nb-Si films were deposited on Nb.84Si.16, Ti3Au and W3Re films with an A15 structure by sputtering. The films with double layers were analyzed using Auger electron spectroscopy. Phase analyses of the sputtered Nb-Si films were carried out by X-ray diffraction studies. The A15 Nb.78Si.22 and Nb.75Si.25 films were grown epitaxially on Nb.84Si.16 and W3Re substrate films. The superconducting transition temperatures of these epitaxial films were found to range between 5 and 9 K.Keywords
This publication has 11 references indexed in Scilit:
- Superconducting Properties and X-Ray Analysis of Nb3Si Produced by Shock SynthesisJapanese Journal of Applied Physics, 1983
- Superconducting properties of Nb-Si compounds produced by shock synthesisSolid State Communications, 1981
- Epitaxial growth of A15 Nb3SiIEEE Transactions on Magnetics, 1981
- Non-epitaxial and epitaxial growth of A15 Nb3Si by sputteringJournal of the Less Common Metals, 1980
- The properties of superconducting Nb3SiIEEE Transactions on Magnetics, 1979
- The electronic structure of hypothetical Nb3Si and V3InSolid State Communications, 1978
- Predicted superconductingT c of 31–35 K for aβ-W type Nb3SiApplied Physics A, 1975
- Superconducting A-15 compounds: A reviewCryogenics, 1975
- Empirical relationship for the critical temperature of some A15 superconductorsNature, 1974
- Identification of a Beta-Tungsten Phase in Tungsten–Rhenium AlloysNature, 1965