An experimental study of high-field moving domains produced by deep centres in semi-insulating GaAs†

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Abstract
Low-frequency oscillations in high-resistance oxygen-doped GaAs are shown to involve high-field domains moving from cathode to anode. These are explained in terms of a model previously derived for field dependence of an acceptor capture cross section. The computer solutions and the experimental studies suggest that the domain velocity is proportional to the current density in the material and inversely proportional to the trap density NT-. This is consistent with physical reasoning in a gross simplification of the problem. Use of this relationship allows the temperature dependence of the domain velocity to be predicted. Experimental determination of this temperature dependence then gives the energy level of the double acceptor centre involved. From this energy level, and from TSC measurements, it is inferred that copper is the acceptor involved in domain formation in the GaAs studied.

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