Modelling Diffusion in Silicides
- 1 January 1989
- book chapter
- Published by Springer Nature
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Defect annihilation in shallow p+ junctions using titanium silicideApplied Physics Letters, 1987
- Silicided shallow junction formation by ion implantation of impurity ions into silicide layers and subsequent drive-inJournal of Applied Physics, 1987
- Silicides for VLSI interconnectsVacuum, 1985