Silicided shallow junction formation by ion implantation of impurity ions into silicide layers and subsequent drive-in
- 1 June 1987
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 61 (11) , 5084-5088
- https://doi.org/10.1063/1.338333
Abstract
We have developed a technique for the fabrication of shallow, silicided n+−p and p+−n junctions with good electrical characteristics. The technique utilizes the ion implantation of dopants into silicide layers previously formed by ion‐beam mixing with Si ions and low‐temperature annealing, and the subsequent drive‐in of implanted dopants into the Si substrate to form shallow junctions. This technique can be applied to the fabrication of metal‐oxide‐semiconductor field‐effect transistor in a self‐aligned fashion and can have a significant impact on complementary metal‐oxide‐semiconductor devices.This publication has 4 references indexed in Scilit:
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- Refractory metal silicide formation by ion beam mixing and rapid thermal annealingApplied Physics Letters, 1985
- Simultaneous formation of silicide ohmic contacts and shallow p+-n junctions by ion-beam mixing and rapid thermal annealingIEEE Electron Device Letters, 1985
- Refractory metal silicides: Thin-film properties and processing technologyIEEE Transactions on Electron Devices, 1983