Refractory metal silicide formation by ion beam mixing and rapid thermal annealing
- 1 October 1985
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 47 (7) , 688-691
- https://doi.org/10.1063/1.96059
Abstract
We have shown that uniform, stoichiometric, low-resistivity refractory metal silicides (MoSi2 and WSi2) can be formed by implanting As ions through respective metal films (Mo and W) deposited on Si and rapid thermal annealing. Rapid diffusion of the implanted As ions is observed during the formation of the metal silicides.Keywords
This publication has 11 references indexed in Scilit:
- Composite TaSi2/n+poly-Si formation by rapid thermal annealingIEEE Electron Device Letters, 1984
- Simultaneous formation of a shallow silicon p-n junction and a shallow silicide/silicon ohmic contact by an ion implantation techniqueApplied Physics Letters, 1982
- The effect of phosphorus ion implantation on molybdenum/silicon contactsJournal of Applied Physics, 1981
- Ion-beam-induced modification of silicide formation in rare-earth metals: Er-Si and Tb-Si systemsApplied Physics Letters, 1980
- Observations on the hexagonal form of MoSi2 and WSi2 films produced by ion implantation and on related snowplow effectsJournal of Applied Physics, 1980
- Refractory metal silicide formation induced by As+ implantationApplied Physics Letters, 1980
- Inert-gas-bubble formation in the implanted metal/Si systemJournal of Applied Physics, 1979
- Reaction kinetics of molybdenum thin films on silicon (111) surfaceJournal of Applied Physics, 1978
- On the effect of a partial sink in binary diffusion in thin filmsJournal of Applied Physics, 1978
- Fabrication and Thermal Stability of W‐Si Ohmic ContactsJournal of the Electrochemical Society, 1976