Observation of changes in the electronic density of states at a Si (111) surface during adsorption of oxygen by Auger electron spectroscopy
- 15 April 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 34 (8) , 488-490
- https://doi.org/10.1063/1.90858
Abstract
The adsorption of oxygen on a Si (111) surface is accompanied by significant changes in the local electronic densities of states. These effects have been monitored as changes in the spectral distribution of emitted L2,3 VV Auger electrons from pure and oxygen‐covered surfaces. Oxygen coverages varying from 0 to slightly below monolayer coverage (237L) have been employed. The present results are compared with data from recent sputter‐profiling studies of the Si‐SiO2 interface, showing similar behaviors in the two types of experiments.Keywords
This publication has 13 references indexed in Scilit:
- Atomic and electronic structure of semiconductor surfacesJournal of Vacuum Science and Technology, 1978
- Theory of valence-band Auger line shapes: Ideal Si (111), (100), and (110)Physical Review B, 1977
- The electronic structure of solid surfacesReviews of Modern Physics, 1976
- Atomic densities of states near Si (111) surfacesPhysical Review B, 1976
- Chemisorption of atomic hydrogen on the silicon (111) 7 × 7 surfacePhysical Review B, 1975
- Elucidation of surface structure and bonding by photoelectron spectroscopy?Surface Science, 1975
- Realistic Tight-Binding Calculations of Surface States of Si and Ge (111)Physical Review Letters, 1974
- Surface and Bulk Contributions to Ultraviolet Photoemission Spectra of SiliconPhysical Review Letters, 1974
- Observation of a Band of Silicon Surface States Containing One Electron Per Surface AtomPhysical Review Letters, 1972
- Photoemission Densities of Intrinsic Surface States for Si, Ge, and GaAsPhysical Review Letters, 1972