Substrate temperature dependence of the growth kinetics and opto-electronic properties of a-Si:H films deposited by RF glow discharge
- 1 December 1989
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 114, 190-192
- https://doi.org/10.1016/0022-3093(89)90109-9
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Substrate temperature dependence of SiH concentration in silane plasmas for amorphous silicon film depositionJournal of Non-Crystalline Solids, 1987
- Investigation of the growth kinetics of glow-discharge hydrogenated amorphous silicon using a radical separation techniqueJournal of Applied Physics, 1986