Electromigration Damage in Conductor Lines: Recent Progress in Microscopic Observation and Mechanistic Modelling
- 1 January 1994
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 30 references indexed in Scilit:
- Reliability and microstructure of Al-Si-V-Pd alloy films for use in ultralarge scale integrationApplied Physics Letters, 1994
- Observation and Modelling of Electromigration-Induced Void growth in Al-Based InterconnectsMRS Proceedings, 1993
- The Microstructural Nature of Electromigration and Mechanical Stress Voids in Integratedcircuit InterconnectMRS Proceedings, 1993
- In situ scanning electron microscopy observation of the dynamic behavior of electromigration voids in passivated aluminum linesJournal of Applied Physics, 1992
- On void nucleation and growth in metal interconnect lines under electromigration conditionsMetallurgical Transactions A, 1992
- In situ observations of dc and ac electromigration in passivated Al linesApplied Physics Letters, 1991
- A model for the effect of line width and mechanical strength on electromigration failure of interconnects with “near-bamboo” grain structuresJournal of Materials Research, 1991
- Electromigration in a single crystalline submicron width aluminum interconnectionApplied Physics Letters, 1991
- Electromigration Resistance and Mechanical Strength: New Perspectives for Interconnect Materials?MRS Proceedings, 1991
- Electromigration in thin aluminum films on titanium nitrideJournal of Applied Physics, 1976