X-ray measurement of the grain sizes of WSi 2 formed in cosputtered W-Si films
- 1 December 1986
- journal article
- Published by IOP Publishing in Chinese Physics Letters
- Vol. 3 (12) , 569-572
- https://doi.org/10.1088/0256-307x/3/12/011
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Electrical transport properties of tungsten silicide thin filmsApplied Physics Letters, 1985
- Properties of low-pressure CVD tungsten silicide for MOS VLSI interconnectionsIEEE Transactions on Electron Devices, 1983
- Properties of tungsten silicide film on polycrystalline siliconJournal of Applied Physics, 1981