Nonequilibrium Acoustic Phonon-Assisted Tunneling in GaAs/(AlGa)As Double Barrier Devices
- 10 July 1995
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 75 (2) , 308-311
- https://doi.org/10.1103/physrevlett.75.308
Abstract
We report the first observations of nonequilibrium phonon-assisted tunneling in a double barrier resonant tunneling device in GaAs. The change in tunnel current produced by the phonons occurs at a bias voltage, which depends on the phonon energy showing that the device has potential as a phonon spectrometer.Keywords
This publication has 11 references indexed in Scilit:
- Probing the wave function of quantum confined states by resonant magnetotunnelingPhysical Review B, 1993
- Effect of Si δ doping and growth temperature on the I(V) characteristics of molecular-beam epitaxially grown GaAs/(AlGa)As resonant tunneling devicesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1993
- Mode-selective scattering of phonons in a semi-insulating GaAs crystal: A case study using phonon imagingPhysical Review B, 1992
- Resonant tunneling through the bound states of a single donor atom in a quantum wellPhysical Review Letters, 1992
- Calculation of phonon-assisted tunneling and valley current in a double-barrier diodeApplied Physics Letters, 1989
- Magnetic field studies of elastic scattering and optic-phonon emission in resonant-tunneling devicesPhysical Review B, 1989
- Resonant Tunneling with Electron-Phonon Interaction: An Exactly Solvable ModelPhysical Review Letters, 1988
- Evidence for LO-phonon-emission-assisted tunneling in double-barrier heterostructuresPhysical Review B, 1987
- Hot phonon effects in heterolayersPhysica B+C, 1985
- Radiation temperature and radiation power of thermal phonon radiators using diamond as transmission mediumJournal of Applied Physics, 1973