Doping properties of selected impurities in Hg1−x Cdx Te
- 1 January 1977
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 6 (1) , 25-38
- https://doi.org/10.1007/bf02660335
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Electrical and far-infrared optical properties of p-type Hg1−xCdxTeJournal of Applied Physics, 1976
- Infrared photovoltaic detectors from ion-implanted CdxHg1−xTeApplied Physics Letters, 1973
- Hg-implanted Hg1−x Cdx Te infrared photovoltaic detectors in the 8- to 14-μm rangeApplied Physics Letters, 1973
- Epitaxial (CdHg)Te Infrared Photovoltaic DetectorsApplied Physics Letters, 1971
- TYPE CONVERSION AND n-p JUNCTION FORMATION IN Hg1−xCdxTe PRODUCED BY PROTON BOMBARDMENTApplied Physics Letters, 1971
- CdxHg1−xTe INFRARED PHOTOVOLTAIC DETECTORSApplied Physics Letters, 1967