Measurements of minority-carrier diffusion length in n-CulnS2 by electron-beam-induced current method
- 1 December 1989
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 66 (11) , 5412-5415
- https://doi.org/10.1063/1.343688
Abstract
The diffusion length of minority carriers in n-CuInS2 samples is examined with electron-beam-induced current (EBIC) technique in vertical and planar configuration. Theories for the interpretation of the EBIC data from the experiments are reported. The holes as minority carriers show a diffusion length in the range of 1 μm, which is promising for high efficient solar energy conversion.This publication has 11 references indexed in Scilit:
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