PHONON BROADENING OF IMPURITY SPECTRAL LINES: II. APPLICATION TO SILICON
- 1 November 1963
- journal article
- Published by Canadian Science Publishing in Canadian Journal of Physics
- Vol. 41 (11) , 1823-1835
- https://doi.org/10.1139/p63-183
Abstract
The general theory of the phonon broadening of impurity spectral lines discussed in an earlier paper is applied to shallow impurity levels in silicon. With the use of a modified hydrogenic model and a deformation potential description of the electron–phonon interaction, expressions are obtained for typical contributions to the half-widths. Some numerical estimations are made for both acceptor and donor cases and are compared with experiment.Keywords
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