Direct Measurement of the Valley-Orbit Splitting of Shallow Donors in Silicon
- 1 January 1962
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 8 (1) , 13-15
- https://doi.org/10.1103/physrevlett.8.13
Abstract
DOI: https://doi.org/10.1103/PhysRevLett.8.13Keywords
This publication has 14 references indexed in Scilit:
- Electron Spin Resonance Experiments on Donors in Silicon. III. Investigation of Excited States by the Application of Uniaxial Stress and Their Importance in Relaxation ProcessesPhysical Review B, 1961
- Factor and Donor Spin-Lattice Relaxation for Electrons in Germanium and SiliconPhysical Review B, 1960
- Spin-Lattice Relaxation of Shallow Donor States in Ge and Si through a Direct Phonon ProcessPhysical Review B, 1960
- Electron Spin-Lattice Relaxation in Phosphorus-Doped SiliconPhysical Review B, 1960
- Hall Effect and Impurity Levels in Phosphorus-Doped SiliconPhysical Review B, 1959
- Electron Spin Resonance Experiments on Shallow Donors in GermaniumPhysical Review Letters, 1959
- Electron Spin Resonance Experiments on Donors in Silicon. II. Electron Spin Relaxation EffectsPhysical Review B, 1959
- Electron Spin Resonance Experiments on Donors in Silicon. I. Electronic Structure of Donors by the Electron Nuclear Double Resonance TechniquePhysical Review B, 1959
- Theory of Donor States in SiliconPhysical Review B, 1955
- Theory of Donor Levels in SiliconPhysical Review B, 1955