Concentration dependence of optical emission from sulfur-doped crystalline silicon

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Abstract
We report the measured dependence of the near-infrared optical emission from sulfur-related impurity centers in crystalline silicon on the sulfur concentration in the sample. The results suggest that each impurity complex contains only a single sulfur atom. Additional experiments support the possible presence of oxygen in the impurity center. We also report the observation of concentration quenching of the emission and the observation of absorption by the ground state of the impurity complex.