Observation of electroluminescence from excitons bound to isoelectronic impurities in crystalline silicon
- 15 February 1986
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 59 (4) , 1399-1401
- https://doi.org/10.1063/1.336489
Abstract
We report the observation and characterization of luminescence near the wavelength 1.11 μm resulting from the electrical excitation and radiative decay of excitons bound to isoelectronic impurities in indium-doped crystalline silicon.This publication has 8 references indexed in Scilit:
- Isoelectronic bound excitons in In- and T1-doped Si: A novel semiconductor defectPhysical Review B, 1984
- Optical properties of copper in silicon: Excitons bound to isoelectronic copper pairsPhysical Review B, 1982
- Photoluminescence from a thermally induced indium complex in siliconJournal of Luminescence, 1981
- Enhancement of long lifetime lines in photoluminescence from Si:InSolid State Communications, 1981
- Bound exciton recombination in beryllium-doped siliconJournal of Physics C: Solid State Physics, 1981
- Localized exciton bound to an isoelectronic trap in siliconPhysical Review B, 1980
- Observation of long lifetime lines in photoluminescence from Si: InSolid State Communications, 1979
- A high resolution investigation of the recombination radiation from Si containing the acceptors B, Al, Ga, In and TlJournal of Luminescence, 1977