A high resolution investigation of the recombination radiation from Si containing the acceptors B, Al, Ga, In and Tl
- 31 December 1977
- journal article
- Published by Elsevier in Journal of Luminescence
- Vol. 15 (4) , 357-384
- https://doi.org/10.1016/0022-2313(77)90036-9
Abstract
No abstract availableThis publication has 49 references indexed in Scilit:
- Magnetic Field and Stress-Induced Splitting of the Novel Sharp Emission Line Series in Silicon Associated with P, Li, or B: No Bound Multiple-Exciton ComplexesPhysical Review Letters, 1976
- Simultaneous luminescence due to excitons, condensation and free electrons phases in siliconSolid State Communications, 1975
- Effects of Doping on the Condensed Electron–Hole State in Germanium and SiliconPhysica Status Solidi (b), 1974
- Bound multiple-exciton complexes in silicon at high doping levels?Solid State Communications, 1974
- New photoluminescence line-series spectra attributed to decay of multiexciton complexes bound to Li, B, and P centers in SiPhysical Review B, 1974
- Evidence for Bound Multiple-Exciton Complexes in SiliconPhysical Review Letters, 1973
- Condensation of non-equilibrium charge carriers in semiconductorsPhysica Status Solidi (a), 1972
- Absorption due to Bound Excitons in SiliconPhysical Review B, 1967
- New Radiative Recombination Processes Involving Neutral Donors and Acceptors in Silicon and GermaniumPhysical Review B, 1967
- Experimental Proof of the Existence of a New Electronic Complex in SiliconPhysical Review Letters, 1960