Surface and Interface Damage Characterization of Reactive Ion Etched MBE Regrown GaAs
- 1 January 1989
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- A combined single-phonon Raman and photoluminescence study of direct and indirect band-gap AlxGa1−xAs alloys grown by molecular-beam epitaxyJournal of Applied Physics, 1989
- Photoluminescent Characterization of MBE‐Grown Reactive Ion‐Etched GaAsJournal of the Electrochemical Society, 1989
- Effect of post-growth annealing on patterned GaAs on siliconApplied Physics Letters, 1988
- Microstructural studies of reactive ion etched siliconApplied Physics Letters, 1987
- Summary Abstract: Physics and applications of quantum wells in opticsJournal of Vacuum Science & Technology B, 1987
- Molecular-beam epitaxy and optical characterization of GaAs on CaF2 substratesJournal of Applied Physics, 1986
- Comparison of the damage and contamination produced by CF4 and CF4/H2 reactive ion etching: The role of hydrogenApplied Physics Letters, 1986
- Surface Damage on GaAs Induced by Reactive Ion Etching and Sputter EtchingJournal of the Electrochemical Society, 1986
- Silicon Damage Caused by Hydrogen Containing PlasmasJournal of the Electrochemical Society, 1983
- Lateral (two-dimensional) superlattices: Quantum-well confinement and charge instabilitiesSurface Science, 1982