Effect of post-growth annealing on patterned GaAs on silicon
- 26 December 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (26) , 2611-2613
- https://doi.org/10.1063/1.100174
Abstract
We have investigated the effect of post-growth thermal annealing on the defect surface of patterned GaAs on silicon. Significant improvements in defect structure of the patterned GaAs were observed by transmission electron microscopy (TEM) after short anneal times (15 min) at temperatures as low as 750 °C. At anneal temperatures of 950 °C, long-range single-crystal lateral regrowth of the original polycrystalline GaAs deposited over the amorphous patterning mask was observed. Micro-Raman spectroscopic characterization of the GaAs grown on the oxide/nitride mask corroborated the TEM results by showing a significant improvement in the crystalline quality of patterned GaAs on silicon following post-growth annealing.Keywords
This publication has 7 references indexed in Scilit:
- Patterned growth of gallium arsenide on siliconJournal of Vacuum Science & Technology B, 1988
- Processing and characterization of GaAs grown into recessed siliconJournal of Vacuum Science & Technology B, 1988
- Microstructural characterization of patterned gallium arsenide grown on 〈001〉 silicon substratesApplied Physics Letters, 1987
- Effect of i n s i t u and e x s i t u annealing on dislocations in GaAs on Si substratesApplied Physics Letters, 1987
- Defect reduction by thermal annealing of GaAs layers grown by molecular beam epitaxy on Si substratesApplied Physics Letters, 1987
- Raman characterization of twinning in heteroepitaxial semiconductor layers: GaAs/(Ca,Sr)F2Journal of Applied Physics, 1986
- Molecular-beam epitaxy and optical characterization of GaAs on CaF2 substratesJournal of Applied Physics, 1986