Raman characterization of twinning in heteroepitaxial semiconductor layers: GaAs/(Ca,Sr)F2
- 1 August 1986
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 60 (3) , 1025-1031
- https://doi.org/10.1063/1.337392
Abstract
Detailed analysis of Raman spectra recorded from (100)-oriented GaAs layers grown by molecular-beam epitaxy on the lattice-matched insulator (Ca,Sr)F2 gives evidence of internal misorientation effects (twins). This analysis accounts for the various phenomena (doping, disorder, electron-phonon coupling) likely to modify the scattering efficiency. Calculations are performed in order to obtain quantitative evaluations of the misoriented volume amount.This publication has 13 references indexed in Scilit:
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