Microstructural characterization of patterned gallium arsenide grown on 〈001〉 silicon substrates
- 6 July 1987
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (1) , 18-20
- https://doi.org/10.1063/1.98890
Abstract
The microstructure of patterned GaAs grown on Si substrates by molecular beam epitaxy has been examined with both transmission and scanning electron microscopies. The GaAs was found to be single crystal with excellent morphology to the limit of the plasma oxide defining mask. In samples where the native oxide was not completely desorbed from the silicon substrate, the GaAs surface morphology was observed to degrade significantly within 20 μm of the single crystal to polycrystalline transition. Even in the region exhibiting a high density of surface defects, the underlying GaAs remained single crystal. Transmission electron microscopy showed a very low defect density in the center of the patterned growth region. The transition from polycrystalline to single-crystal growth occurred directly above the termination point of the oxide mask.Keywords
This publication has 7 references indexed in Scilit:
- Defect reduction by thermal annealing of GaAs layers grown by molecular beam epitaxy on Si substratesApplied Physics Letters, 1987
- Monolithic integration of Si MOSFET's and GaAs MESFET'sIEEE Electron Device Letters, 1986
- Growth and patterning of GaAs/Ge single crystal layers on Si substrates by molecular beam epitaxyApplied Physics Letters, 1984
- Aspects of GaAs Selective Area Growth by Molecular Beam Epitaxy with Patterning by SiO2 MaskingJournal of the Electrochemical Society, 1983
- Low-dislocation-density GaAs epilayers grown on Ge-coated Si substrates by means of lateral epitaxial overgrowthApplied Physics Letters, 1982
- Electron channeling patterns in the scanning electron microscopeJournal of Applied Physics, 1982
- GaAs planar technology by molecular beam epitaxy (MBE)Journal of Applied Physics, 1975