II–VI light-emitting devices based on beryllium chalcogenides
- 1 May 1997
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 175-176, 532-540
- https://doi.org/10.1016/s0022-0248(97)00127-9
Abstract
No abstract availableThis publication has 15 references indexed in Scilit:
- Nitrogen doping of Te-based II–VI compoundsJournal of Crystal Growth, 1997
- Molecular-beam epitaxy of beryllium-chalcogenide-based thin films and quantum-well structuresJournal of Applied Physics, 1996
- II–VI blue-green light emittersJournal of Crystal Growth, 1996
- Relation between hole density and impurity density in ZnMgSSe semiconductorsApplied Physics Letters, 1994
- Blue-green laser diodesApplied Physics Letters, 1991
- Synthesis and some properties of BeTe, BeSe and BeSJournal of Physics and Chemistry of Solids, 1972
- JUNCTION LASERS WHICH OPERATE CONTINUOUSLY AT ROOM TEMPERATUREApplied Physics Letters, 1970
- Self-Compensation-Limited Conductivity in Binary Semiconductors. III. Expected Correlations With Fundamental ParametersPhysical Review B, 1964
- Self-Compensation Limited Conductivity in Binary Semiconductors. I. TheoryPhysical Review B, 1964
- Coherent Light Emission From GaAs JunctionsPhysical Review Letters, 1962