Theory of the Ettingshausen Cooler
- 1 May 1962
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 33 (5) , 1800-1803
- https://doi.org/10.1063/1.1728835
Abstract
A cooling system referred to here as the Ettingshausen cooler, based on the Ettingshausen and Nernst-Ettingshausen effects is studied. It is shown that under dynamic conditions, these two effects are coupled and provide a mechanism for producing a cooling effect. Thermodynamic analysis is carried out and the coefficient of performance is determined. The analysis produced a dimensionless thermomagnetic figure of merit, which sets the requirements on the material's properties. For effective cooling, materials with high thermomagnetic numbers are required. A brief review of the relevent transport processes is made, which shows that intrinsic semiconductors, within certain temperature ranges, are most suitable for the Ettingshausen cooler.This publication has 6 references indexed in Scilit:
- Theory of the Ettingshausen Effect in SemiconductorsPhysical Review B, 1960
- Nernst and Ettingshausen Effects in Silicon between 300°K and 800°KPhysical Review B, 1960
- Nernst and Ettingshausen Effects in Germanium between 300 and 750°KPhysical Review B, 1959
- Ettingshausen Effect and Thermomagnetic CoolingJournal of Applied Physics, 1958
- Phonon-Drag Thermomagnetic Effects in-Type Germanium. I. General SurveyPhysical Review B, 1958
- Thermoelectric and Galvanomagnetic effects in Lead Selenide and TellurideProceedings of the Physical Society. Section B, 1955