Ultrathin gate oxides formed by catalytic oxidation of silicon
- 8 June 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (23) , 1660-1662
- https://doi.org/10.1063/1.97760
Abstract
A recipe to produce ultrathin gate oxides by K-promoted catalytic oxidation of Si is described. The thickness of the final oxide depends linearly on the amount of K predeposited. The resulting oxide is chemically homogeneous. The process takes place at temperatures much lower than those used in thermal oxidation. The maximum temperature required to desorb the catalyst is 600 °C.Keywords
This publication has 15 references indexed in Scilit:
- New experimental studies on the adsorption of K on Si(100) and Si(111)Surface Science, 1986
- Enhancement of Si oxidation by cerium overlayers and formation of cerium silicatePhysical Review B, 1986
- VLSI Technology and Dielectric Film SciencePhysics Today, 1986
- Models for the oxidation of siliconJournal of Vacuum Science & Technology A, 1986
- Microscopic control of semiconductor surface oxidationJournal of Vacuum Science & Technology A, 1985
- Interaction of oxygen with silicon d-metal interfaces: A photoemission investigationJournal of Vacuum Science and Technology, 1982
- Photoemission investigation on the oxidation of Si(111)Ag interfaces and its relation to the interface structureSurface Science, 1982
- Modification of the germanium oxidation process by aluminum adatomsApplied Physics Letters, 1982
- Catalytic action of gold atoms on the oxidation of Si(111) surfacesSurface Science, 1981
- Generalized guide for MOSFET miniaturizationIEEE Electron Device Letters, 1980