Modification of the germanium oxidation process by aluminum adatoms
- 1 April 1982
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 40 (7) , 619-621
- https://doi.org/10.1063/1.93165
Abstract
Ultrathin (nominal thickness 0.4–2 Å) aluminum overlayers dramatically increase the oxidation rate of Ge(111) surfaces. The resulting chemisorption phase does not correspond to any of the known oxides of Ge or Al. This new phase is likely to provide a stable interface between Ge and GeO2.Keywords
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