Infrared Chemiluminescence from Xe-Silicon-Surface Reactions
- 19 March 1979
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 42 (12) , 815-817
- https://doi.org/10.1103/physrevlett.42.815
Abstract
Infrared luminescence has been observed and the emission spectra in the 2.5-8.0-μm region determined for a silicon crystal exposed to Xe gas. In contrast to the broad and structureless emission in the uv and visible regions previously reported for some gassolid systems, the ir spectrum exhibits characteristic fine structure. Furthermore, the emitted radiation shows strong polarization and angular dependence indicating that the emitting species are on the crystal surface.
Keywords
This publication has 9 references indexed in Scilit:
- The etching of silicon with XeF2 vaporApplied Physics Letters, 1979
- Light emitted from molecules adsorbed on a metal surfaceSurface Science, 1977
- Chemisorptive luminescence from Ba and Mg filmsSurface Science, 1977
- Photon and electron emission during halogen adsorption on sodiumSurface Science, 1975
- Photon Emission during Chemisorption of Oxygen on Al and Mg SurfacesPhysical Review Letters, 1974
- Chemisorptive Luminescence: Oxygen on Si(111) SurfacesThe Journal of Chemical Physics, 1971
- Chemisorptive LuminescenceThe Journal of Chemical Physics, 1969
- Infra-red chemiluminescence I. Infra-red emission from hydrogen chloride formed in the systems atomic hydrogen plus chlorine, atomic hydrogen plus hydrogen chloride, atomic hydrogen plus deuterium chloride, and atomic deuterium plus hydrogen chlorideProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1960
- The molecular structures of carbon and silicon tetrafluorides.Proceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1938